Layout Optimizations of Operational Amplifiers in Deep Submicron

High-Reliability Deep Submicron GaAs Pseudomorphic HEMT MMIC Amplifiers

High-reliability performance of a Q-band MMIC amplifier fabricated using TRW’s 0.1 μm production AlGaAs/GaAs HEMT process technology is reported. Operating at an accelerated life test conditions of Vds=4.2V and Ids=150mA/mm, two-stage balanced amplifiers were lifetested at threetemperatures (Ta=255 C, Ta=270 C, and Ta=285 C) in air ambient. The activation energy (Ea) is as high as 1.7 eV, achie...

Applications of Operational Amplifiers

Effects of Global Interconnect Optimizations on Performance Estimation of Deep Submicron Designs*

In this paper, we describe optimization techniques to minimize important design objectives such as delay, peak noise, delay uncertainty due to noise, power, and cost. In doing so, we employ a new system-performance simulation engine, GTX (GSRC Technology Extrapolation). We concentrate on using accurate models of both circuit and design technology. For example, we take such effects as inductance...

Modeling and Layout Optimization of VLSI Devices and Interconnects In Deep Submicron Design

This paper presents an overview of recent advances on modeling and layout optimization of devices and interconnects for high-performance VLSI circuit design under the deep submicron technology. First, we review a number of interconnect and driver/gate delay models, which are most useful to guide the layout optimization. Then, we summarize the available performance optimization techniques for VL...

Methodology on Extracting Compact Layout Rules for Latchup Prevention in Deep-Submicron Bulk CMOS Technology

An experimental methodology to find area-efficient compact layout rules to prevent latchup in bulk complimentary metal–oxide–semiconductor (CMOS) integrated circuits (ICs) is proposed. The layout rules are extracted from the test patterns with different layout spacings or distances. A new latchup prevention design by adding the additional internal double guard rings between input/output cells a...